publications list
Tunnel metal-insulator-semiconductor (PbTe) contacts made by the
chemical assembly method
V.E. Drozd, A.I. Romanychev, S.A. Rykov, M.A. Rykova, and E.V. Tsiper
Department of Radiophysics, Leningrad Polytechnical Institute, Leningrad, USSR
Chemical assemply method has been applied to produce atomic-thin
layers of ZnS on the surface of PbTe to produce PbTe-ZnS-Al tunnel
junctions. Results for tunnel spectroscopy of PbTe are reported.
Fiz. Tekh. Poluprovodn. 23, 2085 (1989)
[Sov. Phys. Semicond. 23, 1291 (1989)]