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Energy spectrum and size quantization in partially ordered semiconductor alloys

M.E. Raikh and E.V. Tsiper

Department of Physics, University of Utah, Salt Lake City, Utah 84112
We present the analytical theory for the conduction-band spectrum in partially ordered semiconductor alloys. It is assumed that the ordering causes the coupling of the electronic states of &Gamma minimum with the states of the closest-in-energy L minimum only. We analyze the reduction of the band gap, change of the effective mass, nonparabolicity, and anisotropy of the electronic spectrum, caused by ordering. Using the spectrum obtained we study the size quantization in an ordered domain sandwiched between two disordered regions. We also calculate the electronic spectrum in the region of interpenetration of two variants of ordering along the [1,-1,1] and [1,1,-1] directions. The localization of an electron in such a region is studied.

Phys. Rev. B49, 2509 (1994)
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This article is cited in:
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FRANCESCHETTI A, WEI SH, ZUNGER A
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ZHANG Y, MASCARENHAS A
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LUO JS, OLSON JM, KURTZ SR, et al.
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PHYS REV B 51: (12) 7603-7612 MAR 15 1995

RAIKH ME, TSIPER EV
EFFECT OF ORDERING ON THE ENERGY-SPECTRUM OF NARROW-GAP III-V ALLOYS - POSSIBILITY OF THE TRANSITION INTO THE GAPLESS STATE
PHYS REV B 50: (20) 14942-14946 NOV 15 1994